Post Doctoral
Operando-based PEEM can provide insight to the role of defects on the device functionality and failure mechanisms. We will apply these techniques to wide bandgap semiconductors that are promising for high power electronics which still require substantial material and device development.
We will develop and apply laser-based photon sources and operando device methods to the PEEM (photoemission electron microscope) to advance metrology capability and apply it to advancing power electronics to correlate between defects, microstructure, and electronic structure.
A Ph.D degree in physics or applied physics.
Experience with photoemission electron microscopy measurements
Experience with designing operando photoemission electron microscopy
Experience with ultrahigh vacuum systems, techniques and procedures
Experience with RF generators, high voltage electronics, network analyzers
Familiarity with scientific software such as Origin, Igor Pro, Tango
Strong oral and written communication skills
Please upload the following (preferably in a single PDF) with your application:
Research proposal
Performing laser-based photoemission electron microscopy and other related measurements on wide bandgap semiconductor materials
- Development of operando photoemission electron microscopy for wide bandgap semiconductor test structures and devices
- Develop preparation methods towards the measurement of wide bandgap semiconductor materials and test structures
- Participate in measurements using electrical or electro-optical techniques
- Perform data analysis on acquired data and prepare manuscripts for publication
- Prepare talks and posters for presentations at national and international conferences